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TSML1000, TSML1020, TSML1030, TSML1040
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
FEATURES
TSML1000 TSML1020
* Package type: surface mount * Package form: GW, RGW, yoke, axial * Dimensions (L x W x H in mm): 2.5 x 2 x 2.7
TSML1030
* Peak wavelength: p = 940 nm * High radiant power * High radiant intensity * Angle of half intensity: = 12 * Low forward voltage * Suitable for high pulse current operation * Good spectral matching with Si photodetectors
16852
TSML1040
* Versatile terminal configurations * Package matches with detector TEMT1000 * Floor life: 168 h, MSL 3, acc. J-STD-020 * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
DESCRIPTION
TSML1000 is an infrared, 940 nm emitting diode in GaAlAs/GaAs with high radiant power molded in a clear, untinted plastic package (with lens) for surface mounting (SMD).
APPLICATIONS
* For remote control * Punched tape readers * Encoder * Photointerrupters
PRODUCT SUMMARY
COMPONENT TSML1000 TSML1020 TSML1030 Ie (mW/sr) 7 7 7 (deg) 12 12 12 12 P (nm) 940 940 940 940 tr (ns) 800 800 800 800
TSML1040 7 Note Test conditions see table "Basic Characteristics"
ORDERING INFORMATION
ORDERING CODE TSML1000 TSML1020 TSML1030 TSML1040 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel Tape and reel Bulk REMARKS MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/bulk PACKAGE FORM Reverse gullwing Gullwing Yoke Axial leads
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current tp/T = 0.5, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM VALUE 5 100 200 1.0 UNIT V mA mA A
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81033 Rev. 1.9, 04-Sep-08
TSML1000, TSML1020, TSML1030, TSML1040
High Power Infrared Emitting Diode, Vishay Semiconductors RoHS Compliant, 940 nm, GaAlAs/GaAs
ABSOLUTE MAXIMUM RATINGS
PARAMETER Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t5s Soldered on PCB, pad dimensions: 4 mm x 4 mm TEST CONDITION SYMBOL PV Tj Tamb Tstg Tsd RthJA VALUE 190 100 - 40 to + 85 - 40 to + 100 < 260 400 UNIT mW C C C C C
200 PV - Power Dissipation (mW) 180 160 140 120 100 80 60 40 20 0 0
16187
120 100 IF - Forward Current (mA) 10 20 30 40 50 60 70 80 90 100 T amb - Ambient Temperature (C)
16188
80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA TEST CONDITION IF = 20 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 20 mA SYMBOL VF VF TKVF IR Cj Ie e TKe p TKp tr tf d 3 25 7 35 - 0.6 12 940 50 0.2 800 800 1.2 15 MIN. TYP. 1.2 2.6 - 1.8 10 MAX. 1.5 UNIT V V mV/K A pF mW/sr mW %/K deg nm nm nm/K ns ns mm
Document Number: 81033 Rev. 1.9, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 233
TSML1000, TSML1020, TSML1030, TSML1040
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
10 000 I F - Forward Current (mA) 0.1 1000 0.2 100 0.5 1.0
1000
0.02
e - Radiant Power (mW)
0.05
tp / T = 0.01
100
10
1
10 0.01
14335
0.10
1.00
10.00
100.00
13602
0.1 10 0
t p - Pulse Duration (ms)
10 1 10 2 10 3 I F - Forward Current (mA)
10 4
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
104 IF - Forward Current (mA)
1.6
103
Ie rel; e rel
1.2 IF = 20 mA 0.8
102 tP = 100 s tP/T = 0.001 101
0.4
100 0
13600
1
2
3
4
0 - 10 0 10
94 7993
50
100
140
VF - Forward Voltage (V)
T amb - Ambient Temperature (C)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000
1.25
Ie - Radiant Intensity (mW/sr)
rel - Relative Radiant Power e
100
1.0
0.75
10
0.5
1
0.25 IF = 100 mA 0 890 940 990
0.1 100
16189
101
102
103
104
14291
IF - Forward Current (mA)
- Wavelength (nm)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81033 Rev. 1.9, 04-Sep-08
TSML1000, TSML1020, TSML1030, TSML1040
High Power Infrared Emitting Diode, Vishay Semiconductors RoHS Compliant, 940 nm, GaAlAs/GaAs
REFLOW SOLDER PROFILE
0 10 20 30
260
Ie rel - Relative Intensity
240
40 Temperature (C) 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
220 200 180 160 140 120 100 80 60 0 20 40 60 80 100 120 140 160 180 200 220
17172
+ 5 C/s
- 5 C/s
60 s to 120 s 5s
18234
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
Time (s)
PRECAUTIONS FOR USE
1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5 C to 35 C, R.H. 60 %. 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5 C to 35 C, R.H. 60 %, devices should be treated at 60 C 5 C for 15 h. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3.
Fig. 10 - Lead Tin (SnPb) Reflow Solder Profile
Document Number: 81033 Rev. 1.9, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 235
TSML1000, TSML1020, TSML1030, TSML1040
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
PACKAGE DIMENSIONS in millimeters: TSML1000
16159
PACKAGE DIMENSIONS in millimeters: TSML1020
3.8 0.2
O 1.9 0.2
0.85
0.15 0.05
0.3
2.5 0.2 2 0.2 1 0.1 1.1 0.5 0.4 4.5 0.1 2.3 0.1
0.75
1.4
2.7 0.2
C
A
16160
www.vishay.com 236
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81033 Rev. 1.9, 04-Sep-08
TSML1000, TSML1020, TSML1030, TSML1040
High Power Infrared Emitting Diode, Vishay Semiconductors RoHS Compliant, 940 nm, GaAlAs/GaAs
PACKAGE DIMENSIONS in millimeters: TSML1030
16228
PACKAGE DIMENSIONS in millimeters: TSML1040
16760
Document Number: 81033 Rev. 1.9, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 237
TSML1000, TSML1020, TSML1030, TSML1040
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
REEL DIMENSIONS in millimeters
0.5
16 0.2
Unreel direction X
.5
60.2
2. 5
0
178 1
Tape position coming out from reel
0.
5
13.2
1.5
13
X Label posted here
Leader and trailer tape: Parts mounted Empty leader (400 mm, min.)
Direction of pulling out Empty trailer (200 mm, min.)
Drawing-No.: 9.800-5080.01-4 Issue: 3; 11.06.08
18033
TAPING DIMENSIONS in millimeters: TSML1000
3.05 0.1 0.3
O 1.55 0.05
4 0.1 1.75 0.1 5.5 0.05 12 0.3 2 0.05
Top tape
Anode Push pin through hole
Feed direction
4 0.1
Quantity per reel: 1000 pcs or 5000 pcs
18030
www.vishay.com 238
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81033 Rev. 1.9, 04-Sep-08
TSML1000, TSML1020, TSML1030, TSML1040
High Power Infrared Emitting Diode, Vishay Semiconductors RoHS Compliant, 940 nm, GaAlAs/GaAs
TAPING DIMENSIONS in millimeters: TSML1020
3.05 0.1 0.3
O 1.55 0.05
4 0.1 1.75 0.1 5.5 0.05
Feed direction
2 0.05
4 0.1
Top tape
Anode Push pin through hole Quantity per reel: 1000 pcs or 5000 pcs
18031
TAPING DIMENSIONS in millimeters: TSML1030
3.05 0.1 0.3
O 1.55 0.05
4 0.1 1.75 0.1 5.5 0.05
Feed direction
2 0.05
4 0.1
18032
Top tape
Anode Push pin through hole Quantity per reel: 1000 pcs or 5000 pcs
12 0.3
12 0.3
Document Number: 81033 Rev. 1.9, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 239
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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